First-principles simulations of Si vacancy diffusion in erbium silicide

First-principles simulations of Si vacancy diffusion in erbium silicide

10.1103/PhysRevB.76.033303

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Bibliographic Details
Main Authors:	Peng, G.W., Feng, Y.P., Bouville, M., Chi, D.Z., Huan, A.C.H., Srolovitz, D.J.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96650
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Institution:	National University of Singapore

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