The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

by Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P.
Published 2014

Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

by Yu, D.S., Chiang, K.C., Cheng, C.F., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L.
Published 2014

Very high κ and high density TiTaO MIM capacitors for analog and RF applications

by Chiang, K.C., Chin, A., Lai, C.H., Chen, W.J., Cheng, C.F., Hung, B.F., Liao, C.C.
Published 2014

Narrow-band band-pass filters on silicon substrates at 30 GHz

by Yu, D.S., Cheng, C.F., Chan, K.T., Chin, A., McAlister, S.P., Zhu, C., Li, M.F., Kwong, D.L.
Published 2014

Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devices

by Yu, D.S., Chin, A., Liao, C.C., Lee, C.F., Cheng, C.F., Li, M.F., Yoo, W.J., McAlister, S.P.
Published 2014

Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

by Lai, C.H., Chin, A., Chiang, K.C., Yoo, W.J., Cheng, C.F., McAlister, S.P., Chi, C.C., Wu, P.
Published 2014

A novel program-erasable high-κ AlN capacitor with memory function

by Chin, A., Lai, C.H., Hung, B.F., Cheng, C.F., McAlister, S.P., Zhu, C., Li, M.-F., Kwong, D.-L.
Published 2014

A novel program-erasable capacitor using high-κ AlN dielectric

by Lai, C.H., Ma, M.W., Cheng, C.F., Chin, A., McAlister, S.P., Zhu, C.X., Li, M.-F., Kwong, D.L.
Published 2014

A novel program-erasable high-k AlN-Si MIS capacitor

by Lai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Yoo, W.J., Li, M.F., Zhu, C., McAlister, S.P., Kwong, D.-L.
Published 2014

3D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS

by Yu, D.S., Chin, A., Laio, C.C., Lee, C.F., Cheng, C.F., Chen, W.J., Zhu, C., Li, M.-F., Yoo, W.J., McAlister, S.P., Kwong, D.L.
Published 2014