Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devices

by HO, CHAW SING, LEE, YUAN PING, LAP, CHAN, LU, YONG FENG, KARUNASIRI, R.P.G.
Published 2012

Cmos gate architecture for integration of salicide process in sub 0.1. .muM devices

by HO, CHAW SING, KARUNASIRI, R. P. G., CHUA, SOO JIN, PEY, KIN LEONG, LEE, KONG HEAN
Published 2012

Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation

by Ho, C.S., Pey, K.L., Wong, H., Karunasiri, R.P.G., Chua, S.J., Lee, K.H., Chan, L.H.
Published 2014

Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formation

by Ho, C.S., Pey, K.L., Tung, C.H., Tee, K.C., Prasad, K., Saigal, D., Tan, J.J.L., Wong, H., Lee, K.H., Osipowicz, T., Chua, S.J., Karunasiri, R.P.G.
Published 2014