ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

بواسطة LEI DIAN
منشور في 2018

Publicly verifiable and secure SVM classification for cloud-based health monitoring services

بواسطة LEI, Dian, LIANG, Jinwen, ZHANG, Chuan, LIU, Ximeng, HE, Daojing, ZHU, Liehuang, GUO, Song
منشور في 2024

GeSn-on-insulator substrate formed by direct wafer bonding

بواسطة Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia
منشور في 2016

Thermal stability of germanium-tin (GeSn) fins

بواسطة Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Masudy-Panah, Saeid, Tan, Chuan Seng, Tok, Eng Soon, Gong, Xiao, Yeo, Yee-Chia
منشور في 2018

GeSn lateral p-i-n photodetector on insulating substrate

بواسطة Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
منشور في 2019

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

بواسطة Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
منشور في 2019

Strain relaxation of germanium-tin (GeSn) fins

بواسطة Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
منشور في 2018

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate

بواسطة Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
منشور في 2020