Copper diffusion barrier performance of amorphous Ta-Ni thin films
Amorphous Ta–Ni thin films were deposited on Si substrate by magnetron sputtering. The oxygen concentration was adjusted by controlling the substrate bias during the sputtering deposition. Two types of Ta–Ni films, namely Ta67.34Ni27.06O5.60 and Ta73.25Ni26.10O0.65 were employed in the current study...
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Main Authors: | , , , , , , |
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其他作者: | |
格式: | Article |
語言: | English |
出版: |
2013
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在線閱讀: | https://hdl.handle.net/10356/100648 http://hdl.handle.net/10220/11040 |
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機構: | Nanyang Technological University |
語言: | English |