Copper diffusion barrier performance of amorphous Ta-Ni thin films
Amorphous Ta–Ni thin films were deposited on Si substrate by magnetron sputtering. The oxygen concentration was adjusted by controlling the substrate bias during the sputtering deposition. Two types of Ta–Ni films, namely Ta67.34Ni27.06O5.60 and Ta73.25Ni26.10O0.65 were employed in the current study...
Saved in:
Main Authors: | Yan, Hua, Tay, Yee Yan, Jiang, Yueyue, Yantara, Natalia, Pan, Jisheng, Liang, Meng Heng, Chen, Zhong |
---|---|
Other Authors: | School of Materials Science & Engineering |
Format: | Article |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/100648 http://hdl.handle.net/10220/11040 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Effect of substrate bias on Ta-Ni diffusion barrier film for copper metallization
by: Yantara, Natalia
Published: (2009) -
Evaluation of substrate bias effect on Ta-Ni thin film as Cu diffusion barrier
by: Jiang, Yueyue
Published: (2009) -
Tantalum based amorphous thin films as copper diffusion barrier
by: Yan, Hua
Published: (2013) -
Effect of oxygen concentration on the thermal stability of magnetron sputtered amorphous Ta–Ni thin films
by: Yan, Hua, et al.
Published: (2013) -
Study of copper diffusion into Ta and TaN barrier materials for MOS devices
by: Loh, S.W., et al.
Published: (2014)