Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes

Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectivenes...

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Main Authors: Tan, Cher Ming, Fu, Chunmiao
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/101087
http://hdl.handle.net/10220/16310
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1010872020-03-07T13:24:50Z Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes Tan, Cher Ming Fu, Chunmiao School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectiveness of reservoir length. We found that current density has no impact at all, but higher line temperature improves the effectiveness. As for the low-K dielectric used, most of them do not affect the effectiveness except CDO which degrade its effectiveness. In all cases, the saturation length where the enhancement ceases remain at around 50 nm, and it is not affected by the above-mentioned parameters. 2013-10-10T01:10:11Z 2019-12-06T20:33:13Z 2013-10-10T01:10:11Z 2019-12-06T20:33:13Z 2012 2012 Conference Paper Tan, C. M., & Fu, C. (2012). Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4. https://hdl.handle.net/10356/101087 http://hdl.handle.net/10220/16310 10.1109/ICSICT.2012.6467816 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Tan, Cher Ming
Fu, Chunmiao
Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
description Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectiveness of reservoir length. We found that current density has no impact at all, but higher line temperature improves the effectiveness. As for the low-K dielectric used, most of them do not affect the effectiveness except CDO which degrade its effectiveness. In all cases, the saturation length where the enhancement ceases remain at around 50 nm, and it is not affected by the above-mentioned parameters.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tan, Cher Ming
Fu, Chunmiao
format Conference or Workshop Item
author Tan, Cher Ming
Fu, Chunmiao
author_sort Tan, Cher Ming
title Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
title_short Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
title_full Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
title_fullStr Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
title_full_unstemmed Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
title_sort effectiveness of reservoir length on electromigration lifetime enhancement for ulsi interconnects with advanced technology nodes
publishDate 2013
url https://hdl.handle.net/10356/101087
http://hdl.handle.net/10220/16310
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