Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes

• المؤلفون الرئيسيون: Tan, Cher Ming, Fu, Chunmiao
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101087; http://hdl.handle.net/10220/16310
• المؤسسة: Nanyang Technological University

Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectivenes...