Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectivenes...
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Main Authors: | Tan, Cher Ming, Fu, Chunmiao |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/101087 http://hdl.handle.net/10220/16310 |
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Institution: | Nanyang Technological University |
Language: | English |
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