Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing

Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing

Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavele...

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Bibliographic Details
Main Authors: Cao, Qi, Tong, Cunzhu, Yoon, Soon Fatt, Liu, Chongyang, Ngo, Chun Yong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
Online Access:https://hdl.handle.net/10356/103135
http://hdl.handle.net/10220/16468
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Institution: Nanyang Technological University
Language: English
Description
Summary:Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.

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