Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing

• المؤلفون الرئيسيون: Cao, Qi, Tong, Cunzhu, Yoon, Soon Fatt, Liu, Chongyang, Ngo, Chun Yong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103135; http://hdl.handle.net/10220/16468
• المؤسسة: Nanyang Technological University

Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavele...