Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing

• Main Authors: Cao, Qi, Tong, Cunzhu, Yoon, Soon Fatt, Liu, Chongyang, Ngo, Chun Yong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
• Online Access: https://hdl.handle.net/10356/103135; http://hdl.handle.net/10220/16468
• Institution: Nanyang Technological University

Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.