Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing

• Main Authors: Cao, Qi, Tong, Cunzhu, Yoon, Soon Fatt, Liu, Chongyang, Ngo, Chun Yong
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
• 在線閱讀: https://hdl.handle.net/10356/103135; http://hdl.handle.net/10220/16468
• 機構: Nanyang Technological University

Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavele...