Modeling, fabrication, and characterization of 3-D capacitor embedded in through-silicon via

A new approach to implement integrated capacitors with an excellent capacitance density, called the “3-D embedded capacitor,” is investigated. It is realized by embedding metal-insulator-metal (MIM) layers onto the trenches of through-silicon vias prior to copper filling. An ultrahigh capacitance de...

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Bibliographic Details
Main Authors: Lin, Ye, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/140157
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Institution: Nanyang Technological University
Language: English
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