Direct metal to metal bonding method for heterogenous 3D integration
Metal-based bonding will create vertical electrical connections between the dies and simultaneously create strong mechanical strength and hermetic sealing allowing heterogeneous 3D integration and 3D packaging. In this study, Cu-Cu fusion bonding with plasma surface modification and Al-Au thermoc...
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| 其他作者: | |
| 格式: | Thesis-Doctor of Philosophy |
| 語言: | English |
| 出版: |
Nanyang Technological University
2020
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/143627 |
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| 總結: | Metal-based bonding will create vertical electrical connections between the dies and
simultaneously create strong mechanical strength and hermetic sealing allowing
heterogeneous 3D integration and 3D packaging. In this study, Cu-Cu fusion bonding with
plasma surface modification and Al-Au thermocompression bonding were studied for
reducing interconnect length, reducing pitch and increasing bandwidth for connection
between top and bottom dies. Both methods of bonding used bonding and post-annealing
temperature 300 ºC or less which is suitable for CMOS dies. Both methods also required
shorter bonding time compared to Cu-Cu thermocompression while enabling batch
annealing. Shear strength, electrical properties and hermetic sealing were investigated
and demonstrated for enabling 3D integration and 3D packaging. Molecular structure and
elemental composition for both methods of bonding were also studied and no voids were
observed. Temperature cycling test from -40 to 125 ºC for 1,000 cycles were performed
for Cu-Cu fusion bonding and mechanical shock test at 503.55g for 1.03 ms repeated 10
times were performed for Al-Au bonded samples to investigate bonding reliability. |
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