RF characterization and design of multi-TSV with embedded capacitor

• المؤلفون الرئيسيون: Panwar, Neeraj, Apriyana, Anak Agung Alit, Lin, Ye, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; TSV Capacitor; High Frequency
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/144081

This paper presents RF characterization and design of multi-TSV with embedded capacitor up to 10GHz. The capacitor is embedded around the TSV structure prior to Cu filling to utilize the vertical dimension, and thus improves the capacitance density and silicon area utilization. Here, the capacitance...