RF characterization and design of multi-TSV with embedded capacitor

• Main Authors: Panwar, Neeraj, Apriyana, Anak Agung Alit, Lin, Ye, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; TSV Capacitor; High Frequency
• Online Access: https://hdl.handle.net/10356/144081
• Institution: Nanyang Technological University

This paper presents RF characterization and design of multi-TSV with embedded capacitor up to 10GHz. The capacitor is embedded around the TSV structure prior to Cu filling to utilize the vertical dimension, and thus improves the capacitance density and silicon area utilization. Here, the capacitance...