Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, G...

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Main Authors: Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/156372
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1563722022-04-26T04:07:55Z Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width Kang, Yuye Xu, Shengqiang Han, Kaizhen Kong, Eugene Y.-J. Song, Zhigang Luo, Sheng Kumar, Annie Wang, Chengkuan Fan, Weijun Liang, Gengchiau Gong, Xiao School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Nanowire GeSn We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes. National Research Foundation (NRF) This work at NUS was supported by Singapore Ministry of Education (MOE) Tier 2 (MOE2018-T2-2-154) and MOE Tier 1 (R-263-000-D65-114). Prof. Fan Weijun acknowledges the support from the National Research Foundation Singapore (NRF-CRP19-2017-01). 2022-04-17T12:44:53Z 2022-04-17T12:44:53Z 2021 Journal Article Kang, Y., Xu, S., Han, K., Kong, E. Y., Song, Z., Luo, S., Kumar, A., Wang, C., Fan, W., Liang, G. & Gong, X. (2021). Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width. Nano Letters, 21(13), 5555-5563. https://dx.doi.org/10.1021/acs.nanolett.1c00934 1530-6984 https://hdl.handle.net/10356/156372 10.1021/acs.nanolett.1c00934 34105972 2-s2.0-85108643799 13 21 5555 5563 en NRF-CRP19-2017-01 Nano Letters © 2021 American Chemical Society. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Nanowire
GeSn
spellingShingle Engineering::Electrical and electronic engineering
Nanowire
GeSn
Kang, Yuye
Xu, Shengqiang
Han, Kaizhen
Kong, Eugene Y.-J.
Song, Zhigang
Luo, Sheng
Kumar, Annie
Wang, Chengkuan
Fan, Weijun
Liang, Gengchiau
Gong, Xiao
Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
description We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Kang, Yuye
Xu, Shengqiang
Han, Kaizhen
Kong, Eugene Y.-J.
Song, Zhigang
Luo, Sheng
Kumar, Annie
Wang, Chengkuan
Fan, Weijun
Liang, Gengchiau
Gong, Xiao
format Article
author Kang, Yuye
Xu, Shengqiang
Han, Kaizhen
Kong, Eugene Y.-J.
Song, Zhigang
Luo, Sheng
Kumar, Annie
Wang, Chengkuan
Fan, Weijun
Liang, Gengchiau
Gong, Xiao
author_sort Kang, Yuye
title Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
title_short Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
title_full Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
title_fullStr Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
title_full_unstemmed Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
title_sort ge₀.₉₅sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
publishDate 2022
url https://hdl.handle.net/10356/156372
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