Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, G...
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sg-ntu-dr.10356-1563722022-04-26T04:07:55Z Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width Kang, Yuye Xu, Shengqiang Han, Kaizhen Kong, Eugene Y.-J. Song, Zhigang Luo, Sheng Kumar, Annie Wang, Chengkuan Fan, Weijun Liang, Gengchiau Gong, Xiao School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Nanowire GeSn We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes. National Research Foundation (NRF) This work at NUS was supported by Singapore Ministry of Education (MOE) Tier 2 (MOE2018-T2-2-154) and MOE Tier 1 (R-263-000-D65-114). Prof. Fan Weijun acknowledges the support from the National Research Foundation Singapore (NRF-CRP19-2017-01). 2022-04-17T12:44:53Z 2022-04-17T12:44:53Z 2021 Journal Article Kang, Y., Xu, S., Han, K., Kong, E. Y., Song, Z., Luo, S., Kumar, A., Wang, C., Fan, W., Liang, G. & Gong, X. (2021). Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width. Nano Letters, 21(13), 5555-5563. https://dx.doi.org/10.1021/acs.nanolett.1c00934 1530-6984 https://hdl.handle.net/10356/156372 10.1021/acs.nanolett.1c00934 34105972 2-s2.0-85108643799 13 21 5555 5563 en NRF-CRP19-2017-01 Nano Letters © 2021 American Chemical Society. All rights reserved. |
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Engineering::Electrical and electronic engineering Nanowire GeSn Kang, Yuye Xu, Shengqiang Han, Kaizhen Kong, Eugene Y.-J. Song, Zhigang Luo, Sheng Kumar, Annie Wang, Chengkuan Fan, Weijun Liang, Gengchiau Gong, Xiao Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
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We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Kang, Yuye Xu, Shengqiang Han, Kaizhen Kong, Eugene Y.-J. Song, Zhigang Luo, Sheng Kumar, Annie Wang, Chengkuan Fan, Weijun Liang, Gengchiau Gong, Xiao |
format |
Article |
author |
Kang, Yuye Xu, Shengqiang Han, Kaizhen Kong, Eugene Y.-J. Song, Zhigang Luo, Sheng Kumar, Annie Wang, Chengkuan Fan, Weijun Liang, Gengchiau Gong, Xiao |
author_sort |
Kang, Yuye |
title |
Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
title_short |
Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
title_full |
Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
title_fullStr |
Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
title_full_unstemmed |
Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
title_sort |
ge₀.₉₅sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width |
publishDate |
2022 |
url |
https://hdl.handle.net/10356/156372 |
_version_ |
1731235762739871744 |