PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method

Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure....

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Main Author: Huang, Baoqiang.
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: 2009
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Online Access:http://hdl.handle.net/10356/15796
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-157962023-07-07T15:59:50Z PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method Huang, Baoqiang. Ang Diing Shenp School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure. Although, NBTI had been research intensively, but the actual mechanism to it has not been verify. Thus, PBTI in p-MOSFET is experimented in this project to understand the difference in the temporal behaviour of PBTI and NBTI by using Ultra Fasting Switching (UFS) technique while maintaining the focus in PBTI. In order to understand more on PBTI, topics that are relevant to subsequent results were first review. The topics included PBTI and NBTI phenomena, interface traps and oxide charges, reaction and diffusion(R-D) model, hydrogen effect and nitrogen effect. Ultra Fast Switching (UFS) techniques were then apply to test the devices. Setting up of experiment will also be included to set as a reference for future work. Data used in the report would include thin (1.9nm) and thick (3nm) SiON dielectric of p-MOSFET in PBTI and having the thick (3nm) dielectric going through NBTI. NBTI has shown to cause negative threshold voltage shift throughout the stress voltage. However, PBTI has observed to have an initial positive threshold voltage shift in low stress voltage and slowly evolving into negative threshold voltage shift at higher stress voltage. A possible explanation to the phenomenon will be state in the report. A comparison with NBTI and PBTI will also be included in the discussion in the field of electric-field dependence and nitrogen effect. Bachelor of Engineering 2009-05-15T06:28:29Z 2009-05-15T06:28:29Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/15796 en Nanyang Technological University 65 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Huang, Baoqiang.
PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
description Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure. Although, NBTI had been research intensively, but the actual mechanism to it has not been verify. Thus, PBTI in p-MOSFET is experimented in this project to understand the difference in the temporal behaviour of PBTI and NBTI by using Ultra Fasting Switching (UFS) technique while maintaining the focus in PBTI. In order to understand more on PBTI, topics that are relevant to subsequent results were first review. The topics included PBTI and NBTI phenomena, interface traps and oxide charges, reaction and diffusion(R-D) model, hydrogen effect and nitrogen effect. Ultra Fast Switching (UFS) techniques were then apply to test the devices. Setting up of experiment will also be included to set as a reference for future work. Data used in the report would include thin (1.9nm) and thick (3nm) SiON dielectric of p-MOSFET in PBTI and having the thick (3nm) dielectric going through NBTI. NBTI has shown to cause negative threshold voltage shift throughout the stress voltage. However, PBTI has observed to have an initial positive threshold voltage shift in low stress voltage and slowly evolving into negative threshold voltage shift at higher stress voltage. A possible explanation to the phenomenon will be state in the report. A comparison with NBTI and PBTI will also be included in the discussion in the field of electric-field dependence and nitrogen effect.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Huang, Baoqiang.
format Final Year Project
author Huang, Baoqiang.
author_sort Huang, Baoqiang.
title PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
title_short PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
title_full PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
title_fullStr PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
title_full_unstemmed PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
title_sort pmosfet pbti (positive-bias temperature instability) measurement using ultra-fast switching method
publishDate 2009
url http://hdl.handle.net/10356/15796
_version_ 1772828726290022400