PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method

• Main Author: Huang, Baoqiang.
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/15796
• Institution: Nanyang Technological University

Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure....