PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method

Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure....

Full description

Saved in:
Bibliographic Details
Main Author: Huang, Baoqiang.
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/15796
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English

Similar Items