PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure....
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2009
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| 在線閱讀: | http://hdl.handle.net/10356/15796 |
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| 機構: | Nanyang Technological University |
| 語言: | English |