Si nanowire based NVM : SONOS fabrication & characterization

Si nanowire based NVM : SONOS fabrication & characterization

A gate-all-around (GAA) non-volatile memory (NVM) SONOS fabricated on a vertical Si nanowire using CMOS compatible technology. Si vertical nanowires with height of 800nm and diameter as small as 20nm were explored. Without advanced lithography technology, the surrounding gate length can be controlle...

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書目詳細資料
主要作者:	Chen, Mincong.
其他作者:	Yu Hongyu
格式:	Final Year Project
語言:	English
出版:	2009
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	http://hdl.handle.net/10356/17073
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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