Si nanowire based NVM : SONOS fabrication & characterization

• المؤلف الرئيسي: Chen, Mincong.
• مؤلفون آخرون: Yu Hongyu
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17073
• المؤسسة: Nanyang Technological University

A gate-all-around (GAA) non-volatile memory (NVM) SONOS fabricated on a vertical Si nanowire using CMOS compatible technology. Si vertical nanowires with height of 800nm and diameter as small as 20nm were explored. Without advanced lithography technology, the surrounding gate length can be controlle...