Characterization of oxide interface charges in trench field stop IGBT
Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interfa...
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Main Authors: | Sim, Zhi Lin, Chin, Wei Mien, Bong, Yi Xiang, Goh, David Eng Hui, Ngwan, Voon Cheng |
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其他作者: | School of Materials Science and Engineering |
格式: | Conference or Workshop Item |
語言: | English |
出版: |
2024
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/175647 |
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機構: | Nanyang Technological University |
語言: | English |
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