Laser annealing of oxide capped Si/Ni nanowire

Laser annealing of oxide capped Si/Ni nanowire

Laser annealing of semiconductor nanowires has opened new possibilities for crystal growth, alloying and novel structure in the rapid miniaturization of microelectronics. The use of laser processing techniques offers a unique control of the heat flow into the material. Different beam delivery system...

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書目詳細資料
主要作者:	Lin, Juncheng.
其他作者:	Pey Kin Leong
格式:	Final Year Project
語言:	English
出版:	2009
主題:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
在線閱讀:	http://hdl.handle.net/10356/17824
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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