Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

• Main Authors: Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2025
• Subjects: Engineering; N-polar Gallium nitride; Vicinal substrate
• Online Access: https://hdl.handle.net/10356/182295
• Institution: Nanyang Technological University

The growth instabilities of N-polar GaN on vicinal SiC substrates with an offcut angle of 4° towards the m-plane using plasma-assisted molecular beam epitaxy (PA-MBE) were systematically studied. The morphology with the coexistence of step bunching and step meandering was demonstrated experimentally...