Modelling and characterisation of heterostructure devices for MMIC application

Modelling and characterisation of heterostructure devices for MMIC application

For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices.

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書目詳細資料
主要作者:	Subrata Halder.
其他作者:	Ng, Geok Ing
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
在線閱讀:	http://hdl.handle.net/10356/3290
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University

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