Development of UV photodetector from high bandgap materials
During past several years, significant progresses have been made with diamond film growth techniques, characterization techniques and application of CVD diamond film to optoelectronics devices.
Saved in:
Main Author: | Jiang, Wei |
---|---|
Other Authors: | Jaeshin, Ahn |
Format: | Theses and Dissertations |
Published: |
2010
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/38989 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
GaAs/AlGaAs (111)A-based and InGaAsP based quantum well infrared photodetectors
by: Li, Hui
Published: (2008) -
Development of UV photodetector structures on silicon
by: Muhammad Osman
Published: (2014) -
Development of Neodymium doped laser material by sol-gel technique
by: Zhou, Bing.
Published: (2008) -
Characterizations of GaN-based high-electron-mobility-transistors (hemts)
by: Wong, Wei Jie.
Published: (2012) -
Low dielectric constant materials for multilevel interconnect applications
by: Wong, Terence Kin Shun.
Published: (2008)