Fabrication of InGaP high electron mobility transistors by electron beam technique
Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/4282 |
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| 總結: | Recently, there has been great interest in the development of the InxGa|.xP material
system as an alternative to AlyGai_yAs, for applications, such as in high electron
mobility transistors, heterojunction bipolar transistors and diode lasers. This is
attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does
not appear to exhibit problems with donor-related deep traps, which can cause
instabilities in the threshold voltage and transconductance of the transistor. In
addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier
recombination velocity, and can be selectively wet etched in HCl-based solutions.
Therefore, this thesis presents the device fabrication and characterisation of the
InxGai.xP/In0.2oGao.8oAs HEMT. |
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