Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process

• Main Authors: Lee, Kwang Hong, Wang, Yue, Wang, Bing, Zhang, Li, Sasangka, Wardhana Aji, Goh, Shuh Chin, Bao, Shuyu, Lee, Kenneth E., Fitzgerald, Eugene A., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Wafer Bonding; Integration
• Online Access: https://hdl.handle.net/10356/86269; http://hdl.handle.net/10220/45258
• Institution: Nanyang Technological University

Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily bonded on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. For GaN HEMT or LED on Si substrate, additional wafer bonding step is required to replace the fragile Si (111) substrate after high temperature GaN growth with a new Si (001) wafer to improve the robustness of the GaN/Si wafers. Through this substrate replacement step, the bonded wafer pair can survive the subsequent processing steps. The monolithic integration of Si-CMOS + III-V devices on a common Si platform enables new generation of systems with more functionality, better energy efficiency, and smaller form factor.