GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD’s exhibited average barrier heig...

Full description

Saved in:

Bibliographic Details
Main Authors:	Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2019
Subjects:	I-V characteristics Epitaxy Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/90024 http://hdl.handle.net/10220/49368
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

Similar Items

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency
by: Sandupatla, Abhinay, et al.
Published: (2020)

Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications
by: Sandupatla, Abhinay
Published: (2020)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
by: Ranjan, Kumud, et al.
Published: (2020)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
by: Whiteside, Matthew, et al.
Published: (2021)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications
by: Lingaparthi, R., et al.
Published: (2021)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Photoreflectance study of Au-Schottky contacts on n-GaN
by: Liu, W., et al.
Published: (2014)

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
by: Kumud Ranjan
Published: (2020)

Electrical characterization of GaN-based Schottky diodes
by: Muhamad Nursharil Zaini.
Published: (2009)

Investigation of Rh-based Schottky electrode on AlGaN/GaN heterostructure
by: Tian, F., et al.
Published: (2014)

Nanopatterning and selective area epitaxy of GaN on Si substrate
by: Wang, L.S., et al.
Published: (2014)

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
by: Zhang, Zi-Hui, et al.
Published: (2015)

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
by: Ranjan, Kumud, et al.
Published: (2015)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
by: Soh, C.B., et al.
Published: (2014)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
by: Li, Yang, et al.
Published: (2017)

Controlled facet growth of GaN and the overgrowth with ZnO
by: ZHOU HAILONG
Published: (2011)

GaN-on-Silicon integration technology
by: Ng, Geok Ing, et al.
Published: (2013)

Optical spectroscopy study on carrier concentration and mobility in GaN
by: Li, Z.-F., et al.
Published: (2014)

InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
by: Zhou, H., et al.
Published: (2014)

Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films
by: Zhou, H., et al.
Published: (2014)

2 MeV proton channeling contrast microscopy of LEO GaN thin film structures
by: Osipowicz, T., et al.
Published: (2014)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

InAlN/GaN HEMTs on Si With High fT of 250 GHz
by: Xing, Weichuan, et al.
Published: (2020)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
by: Liu, X, et al.
Published: (2020)

Dislocation scattering in n-GaN
by: Choi, H.W., et al.
Published: (2014)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
by: Wang, Y.-H., et al.
Published: (2014)

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
by: Hartono, H., et al.
Published: (2014)

GaN converter demonstrator
by: Villarama, Joseph Christian Aguilar
Published: (2022)

Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence
by: Teo, E.J., et al.
Published: (2014)

Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon
by: Park, S.-J., et al.
Published: (2014)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)