Role of Sb on the growth and optical properties of 1.55 μm GaInN(Sb)As/GaNAs quantum well structures by molecular beam expitaxy

• المؤلفون الرئيسيون: Sun, Handong, Calvez, Stephane, Wu, X., Wasilewski, Z. R., Dawson, M. D., Gupta, J. A., Sproule, G. I.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Science::Physics::Optics and light
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90458; http://hdl.handle.net/10220/6044; http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=18&spage=181908&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Role%20of%20Sb%20in%20the%20growth%20and%20optical%20properties%20of%201%2E55%20%26mu%3Bm%20GaInN%28Sb%29As%2FGaNAs%20quantum%2Dwell%20structures%20by%20molecular%2Dbeam%20epitaxy%2E&sici.

High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by molecular-beam epitaxy on GaAs substrates. Photoluminescence and photoluminescence excitation spectroscopy...