Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence

Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-...

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Main Authors: Xu, C. D., Mei, Ting, Dong, Jian Rong
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2010
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在線閱讀:https://hdl.handle.net/10356/91355
http://hdl.handle.net/10220/6397
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機構: Nanyang Technological University
語言: English

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