Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

• Main Authors: Qiu, Y. N., Rorison, J. M., Sun, Handong, Calvez, Stephane, Dawson, M. D., Bryce, A. C.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Science::Physics::Optics and light
• Online Access: https://hdl.handle.net/10356/91711; http://hdl.handle.net/10220/6058; http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=23&spage=231112&epage=&aulast=Qiu&aufirst=%20Y%20%20N&auinit=&title=Applied%20Physics%20Letters&atitle=Influence%20of%20composition%20diffusion%20on%20the%20band%20structures%20of%20InGaNAs%2FGaAs%20quantum%20wells%20investigated%20by%20the%20band%2Danticrossing%20model%2E&sici.
• Institution: Nanyang Technological University

We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and n...