Effect of Ni–P thickness on solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu substrate

• المؤلفون الرئيسيون: Kumar, Aditya, Chen, Zhong, Mhaisalkar, Subodh Gautam, Wong, Chee Cheong, Teo, Poi Siong, Kripesh, Vaidhyanathan
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95233; http://hdl.handle.net/10220/9390

Solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu substrate were investigated for three different Ni–P thicknesses. It was found that during interfacial reactions, Ni3Sn4 intermetallic grows at the Sn–3.5Ag/Ni–P interface along with the crystallizatio...