Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

• Main Authors: Ji, Yun, Zhang, Zi-Hui, Tan, Swee Tiam, Ju, Zhengang, Kyaw, Zabu, Hasanov, Namig, Liu, Wei, Sun, Xiaowei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/95791; http://hdl.handle.net/10220/11789
• Institution: Nanyang Technological University

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper w...