Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper w...

Saved in:

書目詳細資料
Main Authors:	Ji, Yun, Zhang, Zi-Hui, Tan, Swee Tiam, Ju, Zhengang, Kyaw, Zabu, Hasanov, Namig, Liu, Wei, Sun, Xiaowei, Demir, Hilmi Volkan
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
在線閱讀:	https://hdl.handle.net/10356/95791 http://hdl.handle.net/10220/11789
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

PN-type quantum barrier for InGaN/GaN light emitting diodes
由: Zhang, Zi-Hui, et al.
出版: (2013)

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
由: Ji, Y., et al.
出版: (2013)

InGaN/GaN light-emitting diode with a polarization tunnel junction
由: Zhang, Zi-Hui, et al.
出版: (2013)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
由: Zhang, Xueliang, et al.
出版: (2014)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
由: Sun, Xiaowei, et al.
出版: (2013)

A hole modulator for InGaN/GaN light-emitting diodes
由: Zhang, Zi-Hui, et al.
出版: (2015)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
由: Zhang, Zi-Hui, et al.
出版: (2013)

A hole accelerator for InGaN/GaN light-emitting diodes
由: Zhang, Zi-Hui, et al.
出版: (2014)

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
由: Sun, Xiao Wei, et al.
出版: (2015)

Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
由: Kyaw, Zabu, et al.
出版: (2014)

Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
由: Zhang, Yi Ping, et al.
出版: (2017)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
由: Ju, Zhen Gang, et al.
出版: (2016)

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
由: Zhang, Zi-Hui, et al.
出版: (2015)

InGaN/GaN light-emitting diodes : from modeling to their hybrid applications with novel nanomaterials
由: Hasanov, Namig
出版: (2017)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
由: Kyaw, Zabu, et al.
出版: (2014)

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
由: Kyaw, Z., et al.
出版: (2012)

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
由: Zhang, Zi-Hui, et al.
出版: (2015)

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
由: Zhang, Zi-Hui, et al.
出版: (2016)

Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes
由: Zhu, Binbin, et al.
出版: (2017)

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts
由: Hasanov, Namig, et al.
出版: (2018)

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
由: Zhang, Yiping, et al.
出版: (2017)

Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency
由: Zheng, Haiyang, et al.
出版: (2022)

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN
由: Soh, C.B., et al.
出版: (2014)

Efficiency boosting by thermal harvesting in InGaN/GaN light-emitting diodes
由: Lu, Shunpeng, et al.
出版: (2022)

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
由: Soh, C.B., et al.
出版: (2014)

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
由: Ji, Yun, et al.
出版: (2014)

Design, growth, fabrication and characterization of GaN based blue light emitting diode
由: Kyaw, Zabu
出版: (2016)

Embedding nano-pillar arrays into InGaN light-emitting diodes
由: Li, K.H., et al.
出版: (2014)

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes
由: Tara P. Mishra, et al.
出版: (2021)

Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field
由: Zhang, X.H., et al.
出版: (2014)

Quantum dots excited InGaN/GaN phosphor-free white LEDs
由: Chua, S.J., et al.
出版: (2014)

Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures
由: Liu, W., et al.
出版: (2014)

Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures
由: Liu, W., et al.
出版: (2014)

Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
由: Leck, Kheng Swee, et al.
出版: (2013)

MOCVD growth and characterization of InGaN quantum structures
由: ZHANG JI
出版: (2010)

Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture
由: Zhang, Yiping, et al.
出版: (2021)

Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers
由: Lin, F., et al.
出版: (2014)

Study on InGaN/GaN quantum structures and their applications in semiconductor saturable absorber mirror
由: LIN FEN
出版: (2010)

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
由: Ju J., et al.
出版: (2020)

InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
由: Zhou, H., et al.
出版: (2014)