Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper w...

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Main Authors: Ji, Yun, Zhang, Zi-Hui, Tan, Swee Tiam, Ju, Zhengang, Kyaw, Zabu, Hasanov, Namig, Liu, Wei, Sun, Xiaowei, Demir, Hilmi Volkan
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/95791
http://hdl.handle.net/10220/11789
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