Distributed modeling of six-port transformer for millimeter-wave SiGe BiCMOS circuits design
In this paper, a six-port distributed model of on-chip single-turn transformers in silicon that can predict the features of the transformers up to 200 GHz is presented. Moreover, the proposed model is scalable with the diameter of the transformer. Based on the developed model, a transformer balun wi...
Saved in:
Main Authors: | Hou, Debin, Hong, Wei, Goh, Wang Ling, Xiong, Yong-Zhong, Arasu, Muthukumaraswamy Annamalai, He, Jin, Chen, Jixin, Madihian, Mohammad |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/96232 http://hdl.handle.net/10220/11459 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Development of NTU CMOS process for SiGe BiCMOS technology
by: Wang, Jianpeng.
Published: (2008) -
Spur canceling technique by folded XOR gate phase detector and its application to a millimeter-wave SiGe BiCMOS PLL
by: Liang, Yuan, et al.
Published: (2023) -
A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology
by: Hou, Debin, et al.
Published: (2013) -
Sub-nanosecond pulse-forming network on SiGe BiCMOS for UWB communications
by: Tan, A.E.-C., et al.
Published: (2014) -
A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
by: Bi, X., et al.
Published: (2014)