Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors

Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors

The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition studies of the hysteresis behavior and capacitance-voltage characteristics on si...

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書目詳細資料
Main Authors:	Cahyadi, Tommy, Tan, H. S., Mhaisalkar, Subodh Gautam, Lee, Pooi See, Boey, Freddy Yin Chiang, Chen, Z. K., Ng, C. M., Rao, V. R., Qi, Guojun
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Materials
在線閱讀:	https://hdl.handle.net/10356/98488 http://hdl.handle.net/10220/8063
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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