Positive bias-induced Vth instability in graphene field effect transistors

Positive bias-induced Vth instability in graphene field effect transistors

In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. The ΔVth of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, i...

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Main Authors: Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98513
http://hdl.handle.net/10220/11342
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-985132020-03-07T14:00:30Z Positive bias-induced Vth instability in graphene field effect transistors Liu, W. J. Fang, Z. Wang, Z. R. Wang, F. Wu, L. Zhang, J. F. Wei, J. Zhu, H. L. Sun, Xiaowei Tran, Xuan Anh Ng, Geok Ing Yu, Hongyu School of Electrical and Electronic Engineering A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. The ΔVth of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, it does not show much dependence on gate length, width, and the number of graphene layers. The 1/f noise measurement indicates no newly generated traps in SiO2/graphene interface caused by positive bias stressing. Mobility is seen to degrade with temperature in- creasing. The degradation is believed to be caused by the trapped electrons in bulk SiO2 or SiO2/graphene interface and trap generation in bulk SiO2. 2013-07-12T08:46:16Z 2019-12-06T19:56:23Z 2013-07-12T08:46:16Z 2019-12-06T19:56:23Z 2012 2012 Journal Article https://hdl.handle.net/10356/98513 http://hdl.handle.net/10220/11342 10.1109/LED.2011.2181150 en IEEE electron device letters © 2012 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Liu, W. J.
Fang, Z.
Wang, Z. R.
Wang, F.
Wu, L.
Zhang, J. F.
Wei, J.
Zhu, H. L.
Sun, Xiaowei
Tran, Xuan Anh
Ng, Geok Ing
Yu, Hongyu
Positive bias-induced Vth instability in graphene field effect transistors
description In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. The ΔVth of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, it does not show much dependence on gate length, width, and the number of graphene layers. The 1/f noise measurement indicates no newly generated traps in SiO2/graphene interface caused by positive bias stressing. Mobility is seen to degrade with temperature in- creasing. The degradation is believed to be caused by the trapped electrons in bulk SiO2 or SiO2/graphene interface and trap generation in bulk SiO2.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Liu, W. J.
Fang, Z.
Wang, Z. R.
Wang, F.
Wu, L.
Zhang, J. F.
Wei, J.
Zhu, H. L.
Sun, Xiaowei
Tran, Xuan Anh
Ng, Geok Ing
Yu, Hongyu
format Article
author Liu, W. J.
Fang, Z.
Wang, Z. R.
Wang, F.
Wu, L.
Zhang, J. F.
Wei, J.
Zhu, H. L.
Sun, Xiaowei
Tran, Xuan Anh
Ng, Geok Ing
Yu, Hongyu
author_sort Liu, W. J.
title Positive bias-induced Vth instability in graphene field effect transistors
title_short Positive bias-induced Vth instability in graphene field effect transistors
title_full Positive bias-induced Vth instability in graphene field effect transistors
title_fullStr Positive bias-induced Vth instability in graphene field effect transistors
title_full_unstemmed Positive bias-induced Vth instability in graphene field effect transistors
title_sort positive bias-induced vth instability in graphene field effect transistors
publishDate 2013
url https://hdl.handle.net/10356/98513
http://hdl.handle.net/10220/11342
_version_ 1681047468212486144

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