Positive bias-induced Vth instability in graphene field effect transistors
In this letter, we report positive bias-induced Vth instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. The ΔVth of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, i...
Saved in:
Main Authors: | , , , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/98513 http://hdl.handle.net/10220/11342 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |