Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
10.1016/S0026-2714(03)00261-0
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2014
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sg-nus-scholar.10635-1129742023-10-25T21:39:24Z Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM Pey, K.L. Tung, C.H. Radhakrishnan, M.K. Tang, L.J. Sun, Y. Wang, X.D. Lin, W.H. INSTITUTE OF MICROELECTRONICS 10.1016/S0026-2714(03)00261-0 Microelectronics Reliability 43 9-11 1471-1476 MCRLA 2014-11-28T08:12:53Z 2014-11-28T08:12:53Z 2003-09 Conference Paper Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H. (2003-09). Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectronics Reliability 43 (9-11) : 1471-1476. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(03)00261-0 00262714 http://scholarbank.nus.edu.sg/handle/10635/112974 000185791500021 Scopus |
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Asia |
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Singapore Singapore |
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10.1016/S0026-2714(03)00261-0 |
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INSTITUTE OF MICROELECTRONICS |
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INSTITUTE OF MICROELECTRONICS Pey, K.L. Tung, C.H. Radhakrishnan, M.K. Tang, L.J. Sun, Y. Wang, X.D. Lin, W.H. |
| format |
Conference or Workshop Item |
| author |
Pey, K.L. Tung, C.H. Radhakrishnan, M.K. Tang, L.J. Sun, Y. Wang, X.D. Lin, W.H. |
| spellingShingle |
Pey, K.L. Tung, C.H. Radhakrishnan, M.K. Tang, L.J. Sun, Y. Wang, X.D. Lin, W.H. Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| author_sort |
Pey, K.L. |
| title |
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| title_short |
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| title_full |
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| title_fullStr |
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| title_full_unstemmed |
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| title_sort |
correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nmosfets by tem |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/112974 |
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1781789144100372480 |