Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

• Main Authors: Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H.
• Other Authors: INSTITUTE OF MICROELECTRONICS
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/112974
• Institution: National University of Singapore

10.1016/S0026-2714(03)00261-0