Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

10.1016/S0026-2714(03)00261-0

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書目詳細資料
Main Authors: Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H.
其他作者: INSTITUTE OF MICROELECTRONICS
格式: Conference or Workshop Item
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/112974
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