Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
10.1016/S1369-8001(02)00056-2
Saved in:
Main Authors: | Feng, Z.C., Yang, T.R., Liu, R., Wee, T.S.A. |
---|---|
Other Authors: | INSTITUTE OF ENGINEERING SCIENCE |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/113096 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
by: Feng, Z.C., et al.
Published: (2014) -
MOCVD growth and characterization of InGaN quantum structures
by: ZHANG JI
Published: (2010) -
Characterisation of defects generated during constant current InGaN-on-silicon LED operation
by: Made, Riko I, et al.
Published: (2017) -
Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition
by: Liu, W., et al.
Published: (2014) -
MOCVD growth and characterization of wide band gap group III-nitride semiconductors
by: LI PENG
Published: (2010)