STUDYING THE METAL/LAYERED SEMICONDUCTOR SCHOTTKY INTERFACE USING TEMPERATURE DEPENDENT CURRENT-VOLTAGE MEASUREMENTS AND BALLISTIC ELECTRON EMISSION MICROSCOPY
Ph.D
Saved in:
Main Author: | WONG PEI YU CALVIN |
---|---|
Other Authors: | DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/142817 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Ballistic emission spectroscopy and imaging of a buried metal-organic interface
by: Chandrasekhar, N., et al.
Published: (2014) -
Spectroscopy and imaging of metal-organic interfaces using BEEM
by: Kunardi, L., et al.
Published: (2014) -
Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures
by: Zhou, Jiadong, et al.
Published: (2019) -
Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
by: Wong, H.-S., et al.
Published: (2014) -
Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
by: Zhu, S., et al.
Published: (2014)