Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications
Ph.D
Saved in:
Main Author: | KOH BIH HIAN |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/15008 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
by: Ng, T.H., et al.
Published: (2014) -
Fabrication & electrical characterization of SiGe nanocrystal flash memory devices embedded in high k dielectrics
by: ROHIT KUMAR GUPTA
Published: (2010) -
Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
by: Chong, C.C., et al.
Published: (2014) -
Study on application of high-K dielectric materials for discrete charge storage memory
by: WANG YINGQIAN
Published: (2010) -
Modelling and characterization of the quantum dot floatiing gate flash memory
by: ZHOU KAIHONG
Published: (2010)