TEM Study of a RTO Oxide-Interfacial Layer on Epitaxial-Cobalt Silicide (CoSi2) Formation
Master's
Saved in:
Main Author: | Ng Khim Hong |
---|---|
Other Authors: | SINGAPORE-MIT ALLIANCE |
Format: | Theses and Dissertations |
Published: |
2019
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/154219 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Nitride-mediated epitaxy of CoSi2 on Si(001)
by: Chong, R.K.K., et al.
Published: (2014) -
Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formation
by: Ho, C.S., et al.
Published: (2014) -
Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
by: Ho, C.S., et al.
Published: (2014) -
COBALT SILICIDE NANOSTRUCTURES ON SI(001) SURFACE
by: EDWIN ONG BIN LEONG
Published: (2011) -
Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide
by: Tan, W.L., et al.
Published: (2014)