OHMIC CONTACTS FOR COMPOUND SEMICONDUCTORS : GALLIUM ARSENIDE AND GALLIUM NITRIDE
Master's
Saved in:
Main Author: | ZHANG DAN |
---|---|
Other Authors: | DEPT OF ELECTRICAL & COMPUTER ENGG |
Format: | Theses and Dissertations |
Published: |
2019
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/158741 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
OHMIC CONTACTS FOR COMPOUND SEMICONDUCTORS : GALLIUM ARSENIDE AND GALLIUM NITRIDE
by: ZHANG DAN
Published: (2019) -
Investigations on ohmic contact to p-doped gallium nitride
by: LEE CHEE LEONG
Published: (2010) -
Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing
by: Prakash, S., et al.
Published: (2014) -
FABRICATION AND CHARACTERIZATION OHMIC CONTACTS MADE WITH AU/NI/GE/AU MULTILAYER METALLIZATION SYSTEM ON N-TYPE GALLIUM ARSENIDE
by: LEE SENG HIN
Published: (2020) -
Metal contacts to P-type gallium nitride
by: LIM WOON CHI, JANIS
Published: (2010)