Processing technologies for advanced Ge devices
10.1149/2.0301612jss
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Electrochemical Society
2020
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sg-nus-scholar.10635-1835822024-04-16T12:14:13Z Processing technologies for advanced Ge devices Loo, R Hikavyy, A.Y Witters, L Schulze, A Arimura, H Cott, D Mitard, J Porret, C Mertens, H Ryan, P Wall, J Matney, K Wormington, M Favia, P Richard, O Bender, H Thean, A Horiguchi, N Mocuta, D Collaert, N ELECTRICAL AND COMPUTER ENGINEERING Chemical vapor deposition Epitaxial growth FinFET Germanium Nanowires Device processing FinFETs Gate-all-around High mobility channels High-mobility groups Process Technologies Processing technologies Strained layers Budget control 10.1149/2.0301612jss ECS Journal of Solid State Science and Technology 6 1 P14-P20 2020-11-17T06:41:46Z 2020-11-17T06:41:46Z 2017 Article Loo, R, Hikavyy, A.Y, Witters, L, Schulze, A, Arimura, H, Cott, D, Mitard, J, Porret, C, Mertens, H, Ryan, P, Wall, J, Matney, K, Wormington, M, Favia, P, Richard, O, Bender, H, Thean, A, Horiguchi, N, Mocuta, D, Collaert, N (2017). Processing technologies for advanced Ge devices. ECS Journal of Solid State Science and Technology 6 (1) : P14-P20. ScholarBank@NUS Repository. https://doi.org/10.1149/2.0301612jss 2162-8769 https://scholarbank.nus.edu.sg/handle/10635/183582 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Electrochemical Society Unpaywall 20201031 |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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| topic |
Chemical vapor deposition Epitaxial growth FinFET Germanium Nanowires Device processing FinFETs Gate-all-around High mobility channels High-mobility groups Process Technologies Processing technologies Strained layers Budget control |
| spellingShingle |
Chemical vapor deposition Epitaxial growth FinFET Germanium Nanowires Device processing FinFETs Gate-all-around High mobility channels High-mobility groups Process Technologies Processing technologies Strained layers Budget control Loo, R Hikavyy, A.Y Witters, L Schulze, A Arimura, H Cott, D Mitard, J Porret, C Mertens, H Ryan, P Wall, J Matney, K Wormington, M Favia, P Richard, O Bender, H Thean, A Horiguchi, N Mocuta, D Collaert, N Processing technologies for advanced Ge devices |
| description |
10.1149/2.0301612jss |
| author2 |
ELECTRICAL AND COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL AND COMPUTER ENGINEERING Loo, R Hikavyy, A.Y Witters, L Schulze, A Arimura, H Cott, D Mitard, J Porret, C Mertens, H Ryan, P Wall, J Matney, K Wormington, M Favia, P Richard, O Bender, H Thean, A Horiguchi, N Mocuta, D Collaert, N |
| format |
Article |
| author |
Loo, R Hikavyy, A.Y Witters, L Schulze, A Arimura, H Cott, D Mitard, J Porret, C Mertens, H Ryan, P Wall, J Matney, K Wormington, M Favia, P Richard, O Bender, H Thean, A Horiguchi, N Mocuta, D Collaert, N |
| author_sort |
Loo, R |
| title |
Processing technologies for advanced Ge devices |
| title_short |
Processing technologies for advanced Ge devices |
| title_full |
Processing technologies for advanced Ge devices |
| title_fullStr |
Processing technologies for advanced Ge devices |
| title_full_unstemmed |
Processing technologies for advanced Ge devices |
| title_sort |
processing technologies for advanced ge devices |
| publisher |
Electrochemical Society |
| publishDate |
2020 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/183582 |
| _version_ |
1800914711567400960 |