Processing technologies for advanced Ge devices

Processing technologies for advanced Ge devices

10.1149/2.0301612jss

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Bibliographic Details
Main Authors: Loo, R, Hikavyy, A.Y, Witters, L, Schulze, A, Arimura, H, Cott, D, Mitard, J, Porret, C, Mertens, H, Ryan, P, Wall, J, Matney, K, Wormington, M, Favia, P, Richard, O, Bender, H, Thean, A, Horiguchi, N, Mocuta, D, Collaert, N
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Electrochemical Society 2020
Subjects:
Chemical vapor deposition
Epitaxial growth
FinFET
Germanium
Nanowires
Device processing
FinFETs
Gate-all-around
High mobility channels
High-mobility groups
Process Technologies
Processing technologies
Strained layers
Budget control
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183582
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/183582

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